UPA672T

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING The µPA672T is a super-mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.2 –0 +0.1 0.15 –0.05 +0.1 FEATURES Two MOS FET circuits in package the same size as SC-70 Automatic mounting supported 1.25 ±0.1 2.1 ±0.1 6 5 4 0 to 0.1 1 2 3 0.7 0.9 ±0.1 0.65 0.65 1.3 2.0 ±0.2 PIN CONNECTION 6 5 4 1 2 3 1. Source 1 (S1) 2. Gate 1 (G1) 3. Drain 2 (D2) 4. Source 2 (S2) 5. Gate 2 (G2) 6. Drain 1 (D1) Marking: MA ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW ≤ 10 ms, Duty Cycle ≤ 50 % TEST CONDITIONS RATINGS 50 ± 7.0 100 200 200 (Total) 150 –55 to +150 UNIT V V mA mA mW ˚C ˚C Document No. G11259EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA672T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td...