UPA1914

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1914 is a switching device which can be driven directly by a 4 V power source. The µPA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES Can be driven by a 4 V power source Low on-state resistance RDS(on)1 = 57 mΩ MAX. (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 86 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)3 = 96 mΩ MAX. (VGS = –4.0 V, ID = –2.5A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source µPA1914TE EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 –30 ±20 ±4.5 ±18 0.2 2 150 –55 to +150 V V A A W W °C °C Gate Gate Protection Diode Marking: TF Body Diode Source Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 Board, t ≤ 5 sec. Remark PT2 Tch Tstg The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actu...