UPA1803

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1803 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is a switching device which can be driven directly by a 4.5-V power source. The µPA1803 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES Can be driven by a 4.5-V power source Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) Built-in G-S protection diode against ESD 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 0.8 MAX. 0.1 µPA1803GR-9JG 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT 30 ±20 ±8.0 ±32 2.0 150 –55 to +150 V V A A W °C °C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device ac...