UPA1770

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1770 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1770G FEATURES Dual chip type Low on-resistance RDS(on)1 = 37 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = –4.0 V, ID = –3.0 A) RDS(on)3 = 59 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A) Low input capacitance Ciss = 1300 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 Note3 Note3 VDSS VGSS ID(DC) ID(pulse) PT PT PT PT Tch Tstg –20 V V A A W W W W °C °C ! 12 ! 6.0 ! 24 0.40 0.75 1.7 2.0 150 –55 to +150 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) 5 5 Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 Board of 1600 mm x 1.6 mm, Drain Pad size : 4.5 mm x 35 µm, TA = 25°C 2 2 5 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm, TA = 25°C 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every...