UPA1764

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1764 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. 8 PACKAGE DRAWING (Unit : mm) 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES Dual chip type Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 mΩ (TYP.) (VGS = 4.0 V, ID = 3.5 A) Low input capacitance Ciss = 1300 pF (TYP.) Built-in G-S protection diode Small and surface mount package (Power SOP8) 1.8 MAX. 5 5 5 5 1 4 5.37 MAX. 1.44 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1764G EQUIVALENT CIRCUIT (1/2 circuit) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note3 Note3 60 ±20 ±7 ±28 1.7 2.0 150 –55 to +150 7 98 V V A A W W °C °C A mJ Gate Protection Diode Gate Drain Body Diode Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Single Avalanche Current 5 Single Avalanche Energy Source IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 5 2. Mounted on ceramic substrate of 2000 ...