UPA1760

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. PACKAGE DRAWING (Unit : mm) 8 5 1 2 7, 8 3 4 5, 6 ; Source1 ; Gate1 ; Drain1 ; Source2 ; Gate2 ; Drain2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES Dual Chip Type 1.44 Low On-Resistance 5 5 5 1.8 Max. 1 5.37 Max. 4 0.8 RDS(on)1 = 26.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 36.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 42.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) Low Ciss : Ciss = 760 pF TYP. Built-in G-S Protection Diode Small and Surface Mount Package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±8.0 ±32 1.7 2.0 150 –55 to + 150 8 6.4 V V A A W W °C °C A mJ Gate Body Diode Drain EQUIVALENT CIRCUIT (1/2 Circuit) Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 5 5 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.6 mm 3. Sta...