UPA1757

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. 8 Package Drawing (Unit : mm) 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 Features Dual MOS FET chips in small package 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A) 1.44 RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10 –0.05 Low Ciss 0.8 Ciss = 750 pF Typ. 0.05 Min. Small and surface mount package (Power SOP8) 0.15 Built-in G-S protection diode 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.05 Ordering information Part Number Package Power SOP8 µ PA1757G Absolute Maximum Ratings (TA = 25 °C) Drain to source voltage Gate to source voltage Drain current (DC) Drain current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 20 ±12.0 ±7.0 ±28 1.7 2.0 150 −55 to +150 2 V V A A W W °C °C Drain Total power dissipation (1 unit) Total power dissipation (2 unit) Channel temperature Storage temperature Gate Body Diode Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.1 mm Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector agai...