UPA1725

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1725 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This µPA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 2,3 4 5,6,7,8 ; ; ; ; Non connection Source Gate Drain FEATURES 2.5-V gate drive and low on-resistance 1.8 MAX. Built-in G-S protection diode Small and surface mount package (Power SOP8) 0.05 MIN. Low Ciss : Ciss = 950 pF TYP. 0.15 RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) +0.10 –0.05 1.44 RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A) 1 5.37 MAX. 4 6.0 ±0.3 4.4 0.8 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1725G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 ±12 ±7 ±28 2.0 150 –55 to + 150 2 V V A A W °C °C Gate Protection Diode Source Gate Body Diode EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this...