UPA1720

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1720 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management application of notebook computers. FEATURES Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) Low Ciss : Ciss = 800 pF TYP. Built-in G-S Protection Diode Small and Surface Mount Package (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µ PA1720G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT IAS EAS Tch Tstg 30 ±20 ±8 ±32 2.0 8.0 6.4 150 –55 to + 150 V V A A W A mJ °C °C Total Power Dissipation (TA = 25 °C) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature Note3 Note3 Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G138...