DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1716
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This pr...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1716
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect
Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A) Low Ciss : Ciss = 2100 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8 5
1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
1
4 5.37 Max.
+0.10 –0.05
6.0 ±0.3 4.4 0.8
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.8 Max.
1.44
0.05 Min.
0.5 ±0.2 0.10
1.27 0.78 Max. 0.40
+0.10 –0.05
µ PA1716G
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVARENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
–30
V V A A W °C °C
Gate Protection Diode Gate
# 20 #8 # 32
2.0 150 –55 to +150
Body Diode
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
Source
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 1.0 mm Remark The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device actually used, an additiona...