UPA1715

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1715 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5 V, ID = –6.0 A) RDS(on)3 = 12.0 mΩ TYP. (VGS = –4.0 V, ID = –6.0 A) Low Ciss : Ciss = 3800 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10 –0.05 6.0 ±0.3 4.4 0.8 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.8 Max. 1.44 0.05 Min. 0.5 ±0.2 0.10 1.27 0.78 Max. 0.40 +0.10 –0.05 µ PA1715G 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVARENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –30 V V A A W °C °C Gate Protection Diode Gate # 20 #11 # 44 2.0 150 –55 to +150 Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Source Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 0.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actu...