UPA1709

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1709 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) Low Ciss : Ciss = 1850 pF (TYP.) Built-in G-S protection diode Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 Max. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.44 0.15 0.05 Min. µ PA1709G 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVARENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 40 ±25 ±9.0 ±36 2.0 150 –55 to + 150 V V A A W °C °C Gate Protection Diode Gate Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Source Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 0.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rat...