DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1708
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This pr...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1708
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power management switch.
8
PACKAGE DRAWINGS (Unit : mm)
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)
1.44
1 5.37 MAX.
+0.10 –0.05
4
6.0 ±0.3 4.4 0.8
RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) Low Ciss : Ciss = 730 pF (TYP.) Built-in G-S protection diode Small and surface mount package (Power SOP8)
1.8 MAX.
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1708G
EQUIVARENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note3 Note4 Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
40 ±25 ±7.0 ±28 2.0 150 –55 to + 150
V V A A W °C °C
Gate
Drain
Body Diode
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. VGS = 0 V 2. VDS = 0 V
Gate Protection Diode
Source
3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 4. Mounted on ceramic substrate of 1200 mm x 1.7mm Remark The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceedin...