UNR4218

Transistors with built-in Resistor UNR421x Series (UN421x Series) Silicon NPN epitaxial planar type Unit: mm For digital circuits ■ Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts New S type package, allowing supply with the radial taping 0.75 max. 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 ■ Resistance by Part Number UNR4210 UNR4211 UNR4212 UNR4213 UNR4214 UNR4215 UNR4216 UNR4217 UNR4218 UNR4219 UNR421D UNR421E UNR421F UNR421K UNR421L (UN4210) (UN4211) (UN4212) (UN4213) (UN4214) (UN4215) (UN4216) (UN4217) (UN4218) (UN4219) (UN421D) (UN421E) (UN421F) (UN421K) (UN421L) (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 10 kΩ 4.7 kΩ (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 (0.8) 7.6 2 3 1 1: Emitter 2: Collector 3: Base NS-B1 Package Internal Connection R1 B R2 E C ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 −55 to +150 Unit V V mA mW °C °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00020BED 1 UNR421x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base...