UNR212X

Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits ■ Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package allowing easy automatic insertion through tape packing and magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number UNR2121 UNR2122 UNR2123 UNR2124 UNR212X UNR212Y Marking Symbol (R1) (UN2121) 7A 2.2 kΩ (UN2122) 7B 4.7 kΩ (UN2123) 7C 10 kΩ (UN2124) 7D 2.2 kΩ (UN212X) 7I 0.27 kΩ (UN212Y) 7Y 3.1 kΩ (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 5 kΩ 4.6 kΩ 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −500 200 150 −55 to +150 Unit V V mA mW °C °C R1 B R2 E C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) UNR212X Collector-emitter cutoff current (Base open) UNR212X Emitter-base UNR2121 IEBO VEB = −6 V, IC = 0 ICEO VCE = −50 V, IB = 0 Symbol VCBO VCEO ICBO Conditions IC = −10 µA, IE ...