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UN921E Dataheets PDF



Part Number UN921E
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Datasheet UN921E DatasheetUN921E Datasheet (PDF)

Transistors with built-in Resistor UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Silicon NPN epitaxial planer transistor For digital circuits 1.6±0.15 0.4 0.8±0.1 0.4 0.2 -0.05 0.15 -0.05 +0.1 Unit: mm s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing automatic insertion through tape packing and magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3.

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Transistors with built-in Resistor UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Silicon NPN epitaxial planer transistor For digital circuits 1.6±0.15 0.4 0.8±0.1 0.4 0.2 -0.05 0.15 -0.05 +0.1 Unit: mm s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing automatic insertion through tape packing and magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Resistance by Part Number q q q q q q q q q q q q q q q q q q q q Marking Symbol (R1) UN9211 8A 10kΩ UN9212 8B 22kΩ UN9213 8C 47kΩ UN9214 8D 10kΩ UN9215 8E 10kΩ UN9216 8F 4.7kΩ UN9217 8H 22kΩ UN9218 8I 0.51kΩ UN9219 8K 1kΩ UN9210 8L 47kΩ UN921D 8M 47kΩ UN921E 8N 47kΩ UN921F 8O 4.7kΩ UN921K 8P 10kΩ UN921L 8Q 4.7kΩ UNR921M EL 2.2kΩ UNR921N EX 4.7kΩ UNR921AJ 8X 100kΩ UNR921BJ 8Y 100kΩ UNR921CJ 8Z — (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 100kΩ — 47kΩ 0 to 0.1 0.2±0.1 1 : Base 2 : Emitter 3 : Collector SS–Mini Type Pakage Unit: mm 1.60± 0.05 0.80 0.80± 0.05 0.425 0.425 0.80 1.00± 0.05 1.60–0.03 +0.05 0.50 0.50 +0.1 0.85–0.03 +0.05 0.12–0.01 +0.03 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 125 125 –55 to +125 Unit V V mA mW ˚C ˚C 1 : Base 2 : Emitter 3 : Collector SS–Mini Flat Type Pakage (J type) Internal Connection R1 0 to 0.1 C B R2 E 0.70–0.03 +0.05 0.27± 0.02 0.80 1 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ s Electrical Characteristics Parameter Collector cutoff current UN9211 UN9212/9214/921E/921D Emitter cutoff current UN9213/UNR921M/921N/UNR921AJ UN9215/9216/9217/9210/UNR921BJ UN921F/921K UN9219 UN9218/921L/UNR921CJ Collector to base voltage Collector to emitter voltage UN9211 UN9212/921E Forward current transfer ratio UN9213/9214/921M/UNR921AJ/921CJ (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 VCE = 10V, IC = 5mA 160 30 20 80 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOC = 5V, VB = 3.5V, R1 = 1kΩ VOL VCC = 5V, VB = 10V, R1 = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ VCC = 5V, VB = 5V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 47 R1 (–30%) 4.7 0.51 1 100 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 0.2 MHz V 400 0.25 V V 460 V V mA Unit µA µA UN9215*/9216*/9217*/9210*/UNR921BJ hFE UN921F/921D/9219 UN9218/921K/921L UN921N Collector to emitter saturation voltage Output voltage high level Output voltage low level UN9213/921K/UNR921BJ UN921D UN921E UNR921AJ Transition frequency UN9211/9214/9215/921K UN9212/9217 Input resistance UN9213/921D/921E/9210 UN9216/921F/921L/UNR921N UN9218 UN9219/UNR921M UNR921AJ/921BJ * hFE rank classification (UN9215/9216/9217/9210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ s Electrical Characteristics (continued) Parameter UN9211/9212/9213/921L UN9214 UN9218/9219 UN921D Resistance ratio UN921E UN921F UN921K UN921M UN921N UNR921AJ Resistance between Emitter to Base UNR921CJ R2 R1/R2 Symbol (Ta=25˚C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0. 47 2.13 0.047 0.1 1.0 –30% 47 30% kΩ max 1.2 0.25 0.12 Unit 3 UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ Common characteristics chart PT — Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN9211 IC — VCE 160 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚C 100 –25˚C 0.2mA 40 20 0 0 2 4 6 8 10 12 25˚C Ta=75˚C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) .


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