Transistors with built-in Resistor
UN8231/UN8231A
Silicon NPN epitaxial planer transistor
Unit: mm
0.15
For switching
...
Transistors with built-in Resistor
UN8231/UN8231A
Silicon
NPN epitaxial planer
transistor
Unit: mm
0.15
For switching
6.9±0.1 0.7 4.0
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.65 max.
q
0.45–0.05
+0.1
Parameter Collector to base voltage UN8231 UN8231A
Symbol VCBO VCEO ICP IC PT* Tj Tstg
Ratings 20 60 20 50 1.5 0.7 1 150 –55 to +150
Unit V
UN8231 Collector to emitter voltage UN8231A Peak collector current Collector current Total power dissipation Junction temperature Storage temperature
1 : Emitter 2 : Collector 3 : Base MT-2 Type Package
V A A W ˚C ˚C
R1(1kΩ)
Internal Connection
2.5±0.1
s Absolute Maximum Ratings
1
2
3
(Ta=25˚C)
0.45–0.05
+0.1
2.5±0.5
2.5±0.5
C
B
R2 (47kΩ)
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion.
E
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to base voltage UN8231 UN8231A UN8231 UN8231A
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE* VCE(sat)* R1 R1/R2 fT VCB = 10V, IE = –50mA, f = 200MHz Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA IC = 500mA, IB = 5mA 0.7 0.016 1 0.021 200 20 60 20 50 800 2100 0.4 1.3 0.025 MHz *Pulse measurement V kΩ min typ max 1 10 0.5 Unit µA µA mA V
Collector to emitter voltage
14.5±0.5
q
1.0 1.0
q
High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the e...