UN6221

Transistors with built-in Resistor UN6221/6222/6223/6224 Silicon NPN epitaxial planer transistor For digital circuits Unit: mm 0.15 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 6.9±0.1 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 0.65 max. 14.5±0.5 0.45–0.05 +0.1 s Resistance by Part Number q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Emitter 2 : Collector 3 : Base MT-1 Type Pakage Internal Connection R1 2.5±0.1 UN6221 UN6222 UN6223 UN6224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 0.45–0.05 2.5±0.5 1 2 2.5±0.5 3 +0.1 0.85 1.0 C B R2 E 3.5±0.1 0.8 1 Transistors with built-in Resistor UN6221/6222/6223/6224 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current UN6221 UN6222 UN6223/6224 (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE = –50mA, f = 200MHz (–30%) 200 2.2 4.7 10 R1/R2 0.8 0.17 1.0 0.22 1.2 0.27 (+30%) kΩ 4....