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UN6116 Dataheets PDF



Part Number UN6116
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Datasheet UN6116 DatasheetUN6116 Datasheet (PDF)

Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q s Resistance by Part Number q q q q q q q q q q q q q q q 0.45–0.05 +0.1 UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 UN6119 UN6110 UN611D UN611E UN611F UN611H UN611L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 1.

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Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q s Resistance by Part Number q q q q q q q q q q q q q q q 0.45–0.05 +0.1 UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 UN6119 UN6110 UN611D UN611E UN611F UN611H UN611L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 1 : Emitter 2 : Collector 3 : Base MT-1 Type Package Internal Connection R1 2.5±0.1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C 14.5±0.5 q 0.85 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.1 0.8 s Features 0.15 0.7 4.0 1 Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L s Electrical Characteristics Parameter Collector cutoff current UN6111 UN6112/6114/611E/611D Emitter cutoff current UN6113 UN6115/6116/6117/6110 UN611F/611H UN6119 UN6118/611L Collector to base voltage Collector to emitter voltage UN6111 UN6112/611E Forward current transfer ratio UN6113/6114 UN6115*/6116*/6117*/6110* UN611F/611D/6119/611H UN6118/611L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN6113 UN611D UN611E Transition frequency UN6111/6114/6115 UN6112/6117 Input resistance UN6113/6110/611D/611E UN6116/611F/611L UN6118 UN6119 UN611H UN6111/6112/6113/611L UN6114 Resistance ratio UN6118/6119 UN611D UN611E UN611F UN611H (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 VCBO VCEO IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 35 60 hFE VCE = –10V, IC = –5mA 80 160 30 20 VCE(sat) VOH IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz 80 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 0.17 1.0 0.21 0.1 4.7 2.14 0.47 0.22 1.2 0.25 0.12 5.7 2.6 0.57 0.27 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V – 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN6115/6116/6117/6110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 Transistors with built-in Resistor Common characteristics chart PT — Ta 500 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L Total po.


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