Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L
Silico...
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L
Silicon
PNP epitaxial planer
transistor
For digital circuits
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q
s Resistance by Part Number
q q q q q q q q q q q q q q q
0.45–0.05
+0.1
UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 UN6119 UN6110 UN611D UN611E UN611F UN611H UN611L
(R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ
(R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ
1
2
3
0.45–0.05
2.5±0.5
2.5±0.5
+0.1
1 : Emitter 2 : Collector 3 : Base MT-1 Type Package
Internal Connection
R1
2.5±0.1
C
B
R2
E
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C
14.5±0.5
q
0.85
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.
0.65 max.
1.0
3.5±0.1
0.8
s Features
0.15
0.7
4.0
1
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L
s Electrical Characteristics
Parameter Collector cutoff current UN6111 UN6112/6114/611E/611D Emitter cutoff current UN6113 UN6115/6116/6117/6110 UN611F/611H UN611...