Document
Transistors with built-in Resistor
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Silicon NPN epitaxial planer transistor
For digital circuits
2.1±0.1
Unit: mm
1.25±0.1
s Features
0.65
0.425
0.425
1
2.0±0.2
1.3±0.1
0.65
q
3
2
0.9±0.1
0 to 0.1
q q q q q q q q q q q q q q q q q q q q
UN5211 UN5212 UN5213 UN5214 UN5215 UN5216 UN5217 UN5218 UN5219 UN5210 UN521D UN521E UN521F UN521K UN521L UN521M UN521N UN521T UN521V UN521Z
Marking Symbol (R1) 8A 10kΩ 8B 22kΩ 8C 47kΩ 8D 10kΩ 8E 10kΩ 8F 4.7kΩ 8H 22kΩ 8I 0.51kΩ 8K 1kΩ 8L 47kΩ 8M 47kΩ 8N 47kΩ 8O 4.7kΩ 8P 10kΩ 8Q 4.7kΩ EL 2.2kΩ EX 4.7kΩ EZ 22kΩ FD 2.2kΩ FF 4.7kΩ
(R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ
0.7±0.1
0.2±0.1
1 : Base 2 : Emitter 3 : Collector
EIAJ : SC–70 S–Mini Type Package
Internal Connection
R1
C
B
R2
E
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C
0.15 -0.05
+0.1
s Resistance by Part Number
0.2
0.3 -0
q
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.
+0.1
1
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
s Electrical Characteristics
Parameter Collector cutoff current UN5211 UN5212/5214/521E/521D/521M/521N/521T UN5213 Emitter cutoff current UN5215/5216/5217/5210 UN521F/521K UN5219 UN5218/521L/521V UN521Z Collector to base voltage Collector to emitter voltage UN5211 UN5212/521E UN5213/5214/521M Forward current transfer ratio UN5215*/5216*/5217*/5210* UN521F/521D/5219 UN5218/521K/521L UN521N/521T UN521V UN521Z Collector to emitter saturation voltage UN521V Output voltage high level Output voltage low level UN5213/521K UN521D UN521E Transition frequency UN5211/5214/5215/521K UN5212/5217/521T Input resistance UN5213/521D/521E/5210 UN5216/521F/521L/521N/521Z UN5218 UN5219 UN521M/521V
(Ta=25˚C)
Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 0.4 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 160 hFE VCE = 10V, IC = 5mA 30 20 80 6 60 VCE(sat) VOH IC = 10mA, IB = 0.3mA IC = 10mA, IB = 1.5mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VOC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 400 20 200 0.25 0.25 V V V 460 V V mA Unit µA µA
* hFE rank classification (UN5125/5216/5217/5210)
Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
2
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
s Electrical Characteristics (continued)
Parameter UN5211/5212/5213/521L UN5214 UN5218/5219 UN521D Resistance ratio UN521E UN521F/521T UN521K UN521M UN521N UN521V UN521Z R1/R2 Symbol
(Ta=25˚C)
Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 2.13 0.047 0.1 1.0 0.21 max 1.2 0.25 0.12 Unit
3
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Common characteristics chart PT — Ta
240
Total power dissipation PT (mW)
200
160
120
80
40
0 0 40 80 120 160
Ambient temperature Ta (˚C)
Characteristics charts of UN5211 IC — VCE
160 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 400
hFE — IC
VCE=10V
30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1
120 100 80 60
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
Forward current transfer ratio hFE
140
IB=1.0mA 0.9mA 0.8mA
Collector current IC (mA)
300 Ta=75˚C
200 25˚C 100 –25˚C
0.2mA 40 20 0 0 2 4 6 8 10 12
25˚C
Ta=75˚C
0.1mA
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30
VIN — IO
VO=0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB
(V)
Input voltage VIN
(V)
Output current IO (mA)
4
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UN5212 IC — VCE
160
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V
Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA
Collector to emitter saturatio.