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UN521M Dataheets PDF



Part Number UN521M
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Datasheet UN521M DatasheetUN521M Datasheet (PDF)

Transistors with built-in Resistor UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Silicon NPN epitaxial planer transistor For digital circuits 2.1±0.1 Unit: mm 1.25±0.1 s Features 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5211 UN5212 UN5213 UN5214 UN5215 UN5216 UN5217 UN5218 UN5219 UN5210 UN521D UN521E UN521F UN521K UN521L UN521M UN521N UN521T UN521V UN521Z Mark.

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Transistors with built-in Resistor UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Silicon NPN epitaxial planer transistor For digital circuits 2.1±0.1 Unit: mm 1.25±0.1 s Features 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5211 UN5212 UN5213 UN5214 UN5215 UN5216 UN5217 UN5218 UN5219 UN5210 UN521D UN521E UN521F UN521K UN521L UN521M UN521N UN521T UN521V UN521Z Marking Symbol (R1) 8A 10kΩ 8B 22kΩ 8C 47kΩ 8D 10kΩ 8E 10kΩ 8F 4.7kΩ 8H 22kΩ 8I 0.51kΩ 8K 1kΩ 8L 47kΩ 8M 47kΩ 8N 47kΩ 8O 4.7kΩ 8P 10kΩ 8Q 4.7kΩ EL 2.2kΩ EX 4.7kΩ EZ 22kΩ FD 2.2kΩ FF 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 0.7±0.1 0.2±0.1 1 : Base 2 : Emitter 3 : Collector EIAJ : SC–70 S–Mini Type Package Internal Connection R1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.15 -0.05 +0.1 s Resistance by Part Number 0.2 0.3 -0 q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. +0.1 1 UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z s Electrical Characteristics Parameter Collector cutoff current UN5211 UN5212/5214/521E/521D/521M/521N/521T UN5213 Emitter cutoff current UN5215/5216/5217/5210 UN521F/521K UN5219 UN5218/521L/521V UN521Z Collector to base voltage Collector to emitter voltage UN5211 UN5212/521E UN5213/5214/521M Forward current transfer ratio UN5215*/5216*/5217*/5210* UN521F/521D/5219 UN5218/521K/521L UN521N/521T UN521V UN521Z Collector to emitter saturation voltage UN521V Output voltage high level Output voltage low level UN5213/521K UN521D UN521E Transition frequency UN5211/5214/5215/521K UN5212/5217/521T Input resistance UN5213/521D/521E/5210 UN5216/521F/521L/521N/521Z UN5218 UN5219 UN521M/521V (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 0.4 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 160 hFE VCE = 10V, IC = 5mA 30 20 80 6 60 VCE(sat) VOH IC = 10mA, IB = 0.3mA IC = 10mA, IB = 1.5mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VOC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 400 20 200 0.25 0.25 V V V 460 V V mA Unit µA µA * hFE rank classification (UN5125/5216/5217/5210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN5211/.


UN521L UN521M UN521N


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