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UN5110 Dataheets PDF



Part Number UN5110
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Datasheet UN5110 DatasheetUN5110 Datasheet (PDF)

Transistors with built-in Resistor UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Silicon PNP epitaxial planer transistor For digital circuits 2.1±0.1 Unit: mm 1.25±0.1 s Features 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5111 UN5112 UN5113 UN5114 UN5115 UN5116 UN5117 UN5118 UN5119 UN5110 UN511D UN511E UN511F UN511H UN511L UN511M UN511N UN511T UN511V UN511Z Mark.

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Transistors with built-in Resistor UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Silicon PNP epitaxial planer transistor For digital circuits 2.1±0.1 Unit: mm 1.25±0.1 s Features 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5111 UN5112 UN5113 UN5114 UN5115 UN5116 UN5117 UN5118 UN5119 UN5110 UN511D UN511E UN511F UN511H UN511L UN511M UN511N UN511T UN511V UN511Z Marking Symbol 6A 6B 6C 6D 6E 6F 6H 6I 6K 6L 6M 6N 6O 6P 6Q EI EW EY FC FE (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51Ω 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ 2.2kΩ 4.7kΩ 22kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 0.7±0.1 0.2±0.1 1 : Base 2 : Emitter 3 : Collector EIAJ : SC–70 S–Mini Type Package Internal Connection R1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.15 -0.05 +0.1 s Resistance by Part Number 0.2 0.3 -0 q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. +0.1 1 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z s Electrical Characteristics Parameter Collector cutoff current UN5111 UN5112/5114/511E/511D/511M/511N/511T UN5113 Emitter cutoff current UN5115/5116/5117/5110 UN511F/511H UN5119 UN5118/511L/511V UN511Z Collector to base voltage UN511N/511T/511V/511Z Collector to emitter voltage UN511N/511T UN5111 UN5112/511E UN5113/5114/511M Forward current transfer ratio UN5115*/5116*/5117*/5110* UN511F/511D/5119/511H UN5118/511L UN511N/511T UN511V UN511Z Collector to emitter saturation voltage UN511V Output voltage high level Output voltage low level UN5113 UN511D UN511E Transition frequency UN511Z UN5111/5114/5115 UN5112/5117/511T UN5113/5110/511D/511E Input resistance UN5116/511F/511L/511N/511Z UN5118 UN5119 UN511H/511M/511V (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 – 0.4 VCBO VCEO IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 –50 –50 35 60 80 160 hFE VCE = –10V, IC = –5mA 30 20 80 6 60 VCE(sat) VOH IC = –10mA, IB = – 0.3mA IC = –10mA, IB = –1.5mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 200MHz 80 150 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V 400 20 200 – 0.25 – 0.25 V V 460 V mA Unit µA µA V * hFE rank classification (UN5115/5116/5117/5110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z s Electrical Characteristics (continued) Parameter UN5111/5112/5113/511L UN5114 UN5118/5119 UN511D Resistance ratio UN511E UN511F/511T UN511H UN511M UN511N UN511V UN511Z R1/R2 Symbol (Ta=25˚C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 0.047 0.1 1.0 0.21 0.27 max 1.2 0.25 0.12 Unit 3 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Common characteristics chart PT — Ta 240 Total power dissipation PT (mW) 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of UN5111 IC — VCE –160 –140 IB=–1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= –10V hFE — IC Ta=75˚C –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Collector current IC (mA) –0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Forward current transfer ratio hFE 25˚C 120 –25˚C 80 25˚C 40 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ Transis.


UN4224 UN5110 UN5111


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