UN421D

Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/4218/ 4219/4210/421D/421E/421F/421K/421L Silicon NPN epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm s Features q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4211 UN4212 UN4213 UN4214 UN4215 UN4216 UN4217 UN4218 UN4219 UN4210 UN421D UN421E UN421F UN421K UN421L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 10kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.2 s Resistance by Part Number 0.7±0.1 marking +0.2 0.45–0.1 15.6±0.5 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L s Electrical Characteristics Parameter Collector cutoff current UN4211 UN4212/4214/421E/421D UN4213 Emitter cutoff current UN4215/4216/4217/4210 UN421F/421K UN4219 UN4218/421L Collector to base voltage Collector to emitter voltage UN42...