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UN4210 Dataheets PDF



Part Number UN4210
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Datasheet UN4210 DatasheetUN4210 Datasheet (PDF)

Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/4218/ 4219/4210/421D/421E/421F/421K/421L Silicon NPN epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm s Features q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4211 UN4212 UN4213 UN4214 UN4215 UN4216 UN4217 UN4218 UN4219 UN4210 UN421D UN421E UN.

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Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/4218/ 4219/4210/421D/421E/421F/421K/421L Silicon NPN epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm s Features q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4211 UN4212 UN4213 UN4214 UN4215 UN4216 UN4217 UN4218 UN4219 UN4210 UN421D UN421E UN421F UN421K UN421L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 10kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.2 s Resistance by Part Number 0.7±0.1 marking +0.2 0.45–0.1 15.6±0.5 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L s Electrical Characteristics Parameter Collector cutoff current UN4211 UN4212/4214/421E/421D UN4213 Emitter cutoff current UN4215/4216/4217/4210 UN421F/421K UN4219 UN4218/421L Collector to base voltage Collector to emitter voltage UN4211 Forward current transfer ratio UN4212/421E UN4213/4214 UN4215*/4216*/4217*/4210* UN421F/421D/4219 UN4218/421K/421L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN4213/421K UN421D UN421E Transition frequency UN4211/4214/4215/421K UN4212/4217 Input resistance UN4213/421D/421E/4210 UN4216/421F/421L UN4218 UN4219 UN4211/4212/4213/421L UN4214 Resistance ratio UN4218/4219 UN421D UN421E UN421F UN421K (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 hFE VCE = 10V, IC = 5mA 80 160 30 20 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VCC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 R1 (–30%) 47 4.7 0.51 1 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 1.7 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 5.7 2.6 0.57 2.6 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN4215/4216/4217/4210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 Transistors with built-in Resistor Common characteristics chart PT — Ta 400 UN4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L Total power dissipation PT (mW) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteri.


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