Document
Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
Silicon PNP epitaxial planer transistor
For digital circuits
q
q
s Resistance by Part Number
q q q q q q
UN4121 UN4122 UN4123 UN4124 UN412X UN412Y
(R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ
0.7±0.1
1
2
3
1.27 1.27 2.54±0.15
1 : Emitter 2 : Collector 3 : Base New S Type Package
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C
R1
Internal Connection
2.0±0.2
marking
+0.2 0.45–0.1
15.6±0.5
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping.
3.0±0.2
s
Features
4.0±0.2
Unit: mm
C
B
R2
E
1
Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
s Electrical Characteristics
Parameter Collector cutoff current UN412X Collector cutoff current UN412X Emitter cutoff current UN4121 UN4122/412X/412Y UN4123/4124
(Ta=25˚C)
Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VCE(sat) VCE(sat) VOH VOL fT IC = –100mA, IB = –5mA IC = –10mA, IB = – 0.3mA IC = –50mA, IB = –5mA VCC = –5V, VB = – 0.5V, RL = 500Ω VCC = –5V, VB = –3.5V, RL = 500Ω VCB = –10V, IE = 50mA, f = 200MHz 80 2.2 4.7 R1 (–30%) 10 0.27 3.1 0.8 R1/R2 0.17 0.043 1.0 0.22 0.054 0.67 1.2 0.27 0.065 (+30%) kΩ –4.9 – 0.2 – 0.25 – 0.25 – 0.15 V V MHz V min typ max –1 – 0.1 –1 – 0.5 –5 –2 –1 V V mA Unit µA µA
Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN4121 UN4122/412Y UN4123/4124 UN412X
Collector to emitter saturation voltage UN412X UN412Y Output voltage high level Output voltage low level Transition frequency UN4121/4124 Input resistance UN4122 UN4123 UN412X UN412Y Resistance ratio UN4124 UN412X UN412Y
Common characteristics chart PT — Ta
400
Total power dissipation PT (mW)
300
200
100
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2
Transistors with built-in Resistor
Characteristics charts of UN4121 IC — VCE
–240 –100
UN4121/4122/4123/4124/412X/412Y
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 400
hFE — IC
VCE= –10V
–200
–30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –0.01 –1
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta=75˚C
–160
IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA
–120
200
–80
100
25˚C
–40
–0.2mA –0.1mA
–25˚C
–25˚C –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000
0 0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC.