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UN412Y Dataheets PDF



Part Number UN412Y
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Datasheet UN412Y DatasheetUN412Y Datasheet (PDF)

Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits q q s Resistance by Part Number q q q q q q UN4121 UN4122 UN4123 UN4124 UN412X UN412Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ 0.7±0.1 1 2 3 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector cu.

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Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits q q s Resistance by Part Number q q q q q q UN4121 UN4122 UN4123 UN4124 UN412X UN412Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ 0.7±0.1 1 2 3 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C R1 Internal Connection 2.0±0.2 marking +0.2 0.45–0.1 15.6±0.5 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 3.0±0.2 s Features 4.0±0.2 Unit: mm C B R2 E 1 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y s Electrical Characteristics Parameter Collector cutoff current UN412X Collector cutoff current UN412X Emitter cutoff current UN4121 UN4122/412X/412Y UN4123/4124 (Ta=25˚C) Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VCE(sat) VCE(sat) VOH VOL fT IC = –100mA, IB = –5mA IC = –10mA, IB = – 0.3mA IC = –50mA, IB = –5mA VCC = –5V, VB = – 0.5V, RL = 500Ω VCC = –5V, VB = –3.5V, RL = 500Ω VCB = –10V, IE = 50mA, f = 200MHz 80 2.2 4.7 R1 (–30%) 10 0.27 3.1 0.8 R1/R2 0.17 0.043 1.0 0.22 0.054 0.67 1.2 0.27 0.065 (+30%) kΩ –4.9 – 0.2 – 0.25 – 0.25 – 0.15 V V MHz V min typ max –1 – 0.1 –1 – 0.5 –5 –2 –1 V V mA Unit µA µA Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN4121 UN4122/412Y UN4123/4124 UN412X Collector to emitter saturation voltage UN412X UN412Y Output voltage high level Output voltage low level Transition frequency UN4121/4124 Input resistance UN4122 UN4123 UN412X UN412Y Resistance ratio UN4124 UN412X UN412Y Common characteristics chart PT — Ta 400 Total power dissipation PT (mW) 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 Transistors with built-in Resistor Characteristics charts of UN4121 IC — VCE –240 –100 UN4121/4122/4123/4124/412X/412Y VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE — IC VCE= –10V –200 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –0.01 –1 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C –160 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –120 200 –80 100 25˚C –40 –0.2mA –0.1mA –25˚C –25˚C –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC.


UN412X UN412Y UN4210


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