UN4123

Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits q q s Resistance by Part Number q q q q q q UN4121 UN4122 UN4123 UN4124 UN412X UN412Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ 0.7±0.1 1 2 3 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C R1 Internal Connection 2.0±0.2 marking +0.2 0.45–0.1 15.6±0.5 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 3.0±0.2 s Features 4.0±0.2 Unit: mm C B R2 E 1 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y s Electrical Characteristics Parameter Collector cutoff current UN412X Collector cutoff current UN412X Emitter cutoff current UN4121 UN4122/412X/412Y UN4123/4124 (Ta=25˚C) Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VCE(sat) VCE(sat) VOH VOL fT IC = –100mA, IB = –5mA IC = –10mA...