UN2211

Transistors with built-in Resistor UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits 0.65±0.15 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 q q q q q q q q q q q q q q q q q q q q UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2210 UN221D UN221E UN221F UN221K UN221L UN221M UN221N UN221T UN221V UN221Z Marking Symbol (R1) 8A 10kΩ 8B 22kΩ 8C 47kΩ 8D 10kΩ 8E 10kΩ 8F 4.7kΩ 8H 22kΩ 8I 0.51kΩ 8K 1kΩ 8L 47kΩ 8M 47kΩ 8N 47kΩ 8O 4.7kΩ 8P 10kΩ 8Q 4.7kΩ EL 2.2kΩ EX 4.7kΩ EZ 22kΩ FD 2.2kΩ FF 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 1.1 –0.1 1:Base 2:Emitter 3:Collector EIAJ:SC-59 Mini Type Package Internal Connection R1 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.16 –0.06 +0.2 +0.1 s Resistance by Part Number 1.45 ...