UN217

Small Signal Transistor Arrays UN217 Transistor array to drive the small motor s Features q q q q Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 4 elements incorporated (SO–10C) 6.5±0.3 10–0.4±0.1 Unit: mm 5.5±0.3 1 10 1.5±0.1 0.8 s Applications q q q q 0 to 0.1 0.5 6° 0.5±0.2 7.7±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT* Tj Tstg (Ta=25±2˚C) Ratings ±12 ±10 ±7 ±1 0.5 150 –55 to +150 Unit V V V A W ˚C ˚C 1 2 3 4 5 10 9 8 7 6 +0.1 45° Internal Connection Note: ± marks used above: +: NPN part, –: PNP part * TC = 25˚C only when the elements are active 0.2 –0.05 Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. 5 6 12° 6° 12° 8–0.9±0.1 SO–10C Package 1 Small Signal Transistor Arrays UN217 s Electrical Characteristics Parameter Collector cutoff current (Ta=25±2˚C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat)1 fT Cob VF Conditions (NPN) VCB = 10V (PNP) VCB = –10V (NPN) IC = 10µA (PNP) IC = –10µA (NPN) IC = 1mA (PNP) IC = –1mA (NPN) IE = 10µA (PNP) IE = –10µA (NPN) VCE = 1V, IC = 0.5A* (PNP) VCE = –1V, IC = – 0.5A* (NPN) IC = 1A, IB = 30mA (PNP) IC = –1A, IB = –30mA (NPN) VCB = 6V, IE = –50mA, f = 200MHz (PNP) VCB = –6V, IE = 50mA, f = 200MHz (NPN) VCB = 10V, IE = 0, f = ...