Document
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
2.8 –0.3 0.65±0.15
+0.2
Unit: mm
0.65±0.15
1.5 –0.05
+0.25
0.95
2.9 –0.05
1
1.9±0.2
+0.2
0.95
3
1.45 0 to 0.1
2
s Resistance by Part Number
1.1 –0.1
+0.2
q q q q q q
UN2121 UN2122 UN2123 UN2124 UN212X UN212Y
Marking Symbol (R1) 7A 2.2kΩ 7B 4.7kΩ 7C 10kΩ 7D 2.2kΩ 7I 0.27kΩ 7Y 3.1kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ
0.1 to 0.3 0.4±0.2
1:Base 2:Emitter 3:Collector
0.8
EIAJ:SC-59 Mini Type Package
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –500 200 150 –55 to +150 Unit V V mA mW ˚C ˚C
R1
Internal Connection
C
B
R2
E
0.16 –0.06
+0.1
0.4 –0.05
+0.1
1
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
s Electrical Characteristics
Parameter Collector cutoff current UN212X Collector cutoff current UN212X Emitter cutoff current UN2121 UN2122/212X/212Y UN2123/2124
(Ta=25˚C)
Symbol ICBO ICBO ICEO ICEO IEBO VCBO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VCE(sat) VCE(sat) VOH VOL fT IC = –100mA, IB = –5mA IC = –10mA, IB = – 0.3mA IC = –50mA, IB = –5mA VCC = –5V, VB = – 0.5V, RL = 500Ω VCC = –5V, VB = –3.5V, RL = 500Ω VCB = –10V, IE = 50mA, f = 200MHz 200 2.2 4.7 R1 (–30%) 10 0.27 3.1 0.8 R1/R2 1.0 0.22 0.054 0.67 1.2 (+30%) kΩ –4.9 – 0.2 – 0.25 – 0.25 – 0.15 V V MHz V min typ max –1 – 0.1 –1 – 0.5 –5 –2 –1 V mA Unit µA µA
Collector to base voltage Forward current transfer ratio UN2121 UN2122/212Y UN2123/2124 UN212X
Collector to emitter saturation voltage UN212X UN212Y Output voltage high level Output voltage low level Transition frequency UN2121 Input resistance UN2122 UN2123 UN212X UN212Y Resistance ratio UN2124 UN212X UN212Y
Common characteristics chart PT — Ta
250
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2
Transistors with built-in Resistor
Characteristics charts of UN2121 IC — VCE
–240 –100
UN2121/2122/2123/2124/212X/212Y
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 400
hFE — IC
VCE= –10V
–200
–30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –0.01 –1
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta=75˚C
–160
IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA
–120
200
–80
100
25˚C
–40
–0.2mA –0.1mA
–25˚C
–25˚C –3 –10 –30 –100 –300 –1000 0 –1 –3 –10 –30 –100 –300 –1000
0 0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
12
IO — VIN
f=1MHz IE=0 Ta=25˚C
VIN — IO
VO=–5V Ta=25˚C
–100 –30 VO= –0.2V Ta=25˚C
–10000 –3000
Collector output capacitance Cob (pF)
10
Output current IO (µA)
8
Input voltage VIN (V)
–1000 –300 –100 –30 –10 –3
–10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3
6
4
2
0 –0.1 –0.3
–1
–3
–10
–30
–100
–1 –0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2122 IC — VCE
–300
VCE(sat) — IC
–100
hFE — IC
IC/IB=10
160 VCE= –10V Ta=75˚C
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C –250
–30 –10 –3 –1 –0.3 25˚C –0.1 –0.03 –0.01 –1 –25˚C
Forward current transfer ratio hFE
Collector current IC (mA)
IB=–1.0mA –200 –0.9mA –0.8mA –150 –0.7mA –0.6mA –0.5mA –100 –0.4mA –0.3mA –50 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12
120 25˚C
Ta=75˚C
80
–25˚C 40
–3
–10
–30
–100 –300 –1000
0 –1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
3
Transistors with built-in Resistor
Cob — VCB
24
UN2121/2122/2123/2124/212X/212Y
IO — VIN VIN — IO
VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C
Collector output capacitance Cob (pF)
20
f=1MHz IE=0 Ta=25˚C
–10000 –3000
Output current IO (µA)
16
–300 –100 –30 –10 –3
Input voltage VIN (V)
–0.6 –0.8 –1.0 –1.2 –1.4
–1000
–10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3
12
8
4
0 –0.1 –0.3
–1
–3
–10
–30
–100
–1 –0.4
–1
–3
–10
–30
–100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UN2123 IC — VCE
–240
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C –100 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –1 –3 –10 –30 –100 –300 –1000 0 –1 –3 IC/IB=10 200 VCE= –10V
hFE — IC
Ta=75˚C 25˚C 150
–200
–160
I.