UN2118

Transistors with built-in Resistor UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits 0.65±0.15 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 q q q q q q q q q q q q q q q q q q q q UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2119 UN2110 UN211D UN211E UN211F UN211H UN211L UN211M UN211N UN211T UN211V UN211Z Marking Symbol (R1) 6A 10kΩ 6B 22kΩ 6C 47kΩ 6D 10kΩ 6E 10kΩ 6F 4.7kΩ 6H 22kΩ 6I 0.51kΩ 6K 1kΩ 6L 47kΩ 6M 47kΩ 6N 47kΩ 6O 4.7kΩ 6P 2.2kΩ 6Q 4.7kΩ EI 2.2kΩ EW 4.7kΩ EY 22kΩ FC 2.2kΩ FE 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 1.1 –0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0.8 EIAJ:SC-59 Mini Type Package Internal Connection R1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.16 –0.06 +0.2 +0.1 s Resistance by Part Number 0.4 –0.05 ...