UN1221

Transistors with built-in Resistor UN1221/1222/1223/1224 Silicon NPN epitaxial planer transistor 6.9±0.1 2.5±0.1 1.0 1.0 3.5±0.1 2.4±0.2 2.0±0.2 0.45±0.05 1.25±0.05 2 1 2.5 Unit: mm 1.5 0.4 1.5 R0.9 R0.9 For digital circuits s Features q q 0.85 s Resistance by Part Number q q q q 0.55±0.1 UN1221 UN1222 UN1223 UN1224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (Ta=25˚C) Ratings 50 50 500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C 3 2.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 C B R2 E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current UN1221 UN1222 UN1223/1224 (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE = –50mA, f = 200MHz (–30%) 200 2.2 4.7 10 R1/R2 0.8 1.0 0.22 1.2 (+30%) kΩ 4.9 0.2 50 50 40 50 60 0.25 V V V MHz min typ max 1 1 5 2 1 V V mA Unit µA µA Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN1221 UN1222 UN1223/1224 Collector to emitter saturation voltage Output voltage high level Output volta...