UN121L

Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 1.0 2.4±0.2 2.0±0.2 0.45±0.05 2 1 2.5 1.0±0.1 R 0. 7 0.85 0.55±0.1 s Resistance by Part Number q q q q q q q q q q q q q q q UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN1210 UN121D UN121E UN121F UN121K UN121L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 10kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 3 2.5 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 1.25±0.05 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C 4.1±0.2 4.5±0.1 1 Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L s Electrical Characteristics Parameter Collector cutoff current UN1211 UN1212/1214/121E/121D Emitter cutoff current U...