Document
Transistors with built-in Resistor
UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L
Silicon NPN epitaxial planer transistor
For digital circuits
6.9±0.1 1.5 2.5±0.1 1.0
Unit: mm
s
q q
0.4
1.5 R0.9 R0.9
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.5±0.1
1.0 2.4±0.2 2.0±0.2
0.45±0.05 2 1 2.5
1.0±0.1
R 0. 7
0.85
0.55±0.1
s Resistance by Part Number
q q q q q q q q q q q q q q q
UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN1210 UN121D UN121E UN121F UN121K UN121L
(R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 10kΩ 4.7kΩ
(R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ
3
2.5
1:Base 2:Collector 3:Emitter M Type Mold Package
Internal Connection
R1
1.25±0.05
C
B
R2
E
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C
4.1±0.2
4.5±0.1
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Transistors with built-in Resistor
UN1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L
s Electrical Characteristics
Parameter Collector cutoff current UN1211 UN1212/1214/121E/121D Emitter cutoff current UN1213 UN1215/1216/1217/1210 UN121F/121K UN1219 UN1218/121L Collector to base voltage Collector to emitter voltage UN1211 Forward current transfer ratio UN1212/121E UN1213/1214 UN1215*/1216*/1217*/1210* UN121F/121D/1219 UN1218/121K/121L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN1213/121K UN121D UN121E Transition frequency UN1211/1214/1215/121K UN1212/1217 Input resistance UN1213/121D/121E/1210 UN1216/121F/121L UN1218 UN1219 UN1211/1212/1213/121L UN1214 Resistance ratio UN1218/1219 UN121D UN121E UN121F UN121K
(Ta=25˚C)
Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 hFE VCE = 10V, IC = 5mA 80 160 30 20 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VCC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 80 10 22 R1 (–30%) 47 4.7 0.51 1 0.8 0.17 0.08 R1/R2 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 0.25 V V 460 V V mA Unit µA µA
* hFE rank classification (UN1215/1216/1217/1210)
Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
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UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L
Common characteristics chart PT — Ta
500
Total power dissipation PT (mW)
400
300
200
10.