Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital ...
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon
PNP epitaxial planer
transistor
For digital circuits
s Features
q q
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0±0.1
R 0. 7
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.4
1.5 R0.9 R0.9
3.5±0.1
1.0 2.4±0.2 2.0±0.2
0.45±0.05 2 1 2.5
0.85
s
q q q q q q
Resistance by Part Number
UN1121 UN1122 UN1123 UN1124 UN112X UN112Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ
0.55±0.1
3
2.5
1:Base 2:Collector 3:Emitter M Type Mold Package
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C
R1
Internal Connection
1.25±0.05
C
B
R2
E
4.1±0.2
4.5±0.1
1
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
s Electrical Characteristics
Parameter Collector cutoff current UN112X Collector cutoff current UN112X Emitter cutoff current UN1121 UN1122/112X/112Y UN1123/1124
(Ta=25˚C)
Symbol ICBO ICBO ICEO ICEO IEBO VCBO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 –50 40 hFE VCE = –10V, IC = –100m...