RF Power Amplifier
GaAs PA Module
UN0231C
RF Power Amplifier Module
Unit : mm
For the preamplifier of the transmitting section in a cellu...
Description
GaAs PA Module
UN0231C
RF Power Amplifier Module
Unit : mm
For the preamplifier of the transmitting section in a cellular phone s Features
High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm)
φ 0.8
12
11
10
1 2 3
6 7.3 7.5±0.15 5 4 4.0
s Absolute Maximum Ratings Ta=25°C
Parameter Power supply voltage 1 *1 Power supply voltage 2 *1 Circuit current 1 Circuit current 2 Gate voltage Max input power Allowable power dissipation Case temperature *2 Storage temperature Symbol VDD1 VDD2 IDD1 IDD2 VGG PIN PD Tcase Tstg Ratings 6 6 200 800 −4 10 2 −30 to +110 −30 to +120 Unit V V mA mA V dBm W °C °C
1 : PIN 2 : VDD1 3 : VDD2 4 : POUT
4-0.7
7
8 (0.9) 2-1.2 4.0 7.5±0.15
9 1.5±0.2 0.59 Tolerance dimension without indication : ±0.3
5 : GND 6 : VGG 7 : GND 8 : GND PAM01
9 : GND 10 : GND 11 : GND 12 : GND
Note) 1. The reverse of the device is solderd to the plate 2. *1 : VGG=−3.5 V *2 : Tcase=25°C
s Electrical Characteristics VGG=−2.5 V, f=824 MHz to 849 MHz, Ta=25°C±3°C, Nominal : ZS=ZL=50 Ω
Parameter Idle current Gate current
*1
Symbol Iidle IGG IDD1 IDD2 G1 G2 2fO 3fO 4fO
*1
Conditions VDD1=VDD2=3.5 V, PIN=No VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm ±900 kHz Detuning, 30 kHz Bandwidth ...
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