UMZ68N

UMZ6.8N Diodes Zener Diode UMZ6.8N !Applications Constant voltage control For the ESD measure of a signal line !External dimensions (Units: mm) 2.0±0.2 1.3±0.1 0.65 0.65 0.9±0.1 0.3 0.6 0.3±0.1 0.15±0.05 (All pins have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Power dissipation ∗ Symbol P Limits 200 150 −55~+150 Unit mW °C °C Junction temperature Storage temperature Tj Tstg ∗ Total of 2 elements !Electrical characteristics (Ta=25°C) Parameter Zener voltage Reverse current Operating resistance Capacitance between terminals Symbol VZ IR ZZ CT Min. 6.47 − − − Typ. − − − 9 Max. 7.14 0.5 40 − Unit V µA Ω pF IZ=5mA VR=3.5V IZ=5mA f=1MHZ, VR=5V Conditions 0.1Min. 6C !Features 1) Small surface mounting type (UMD3) 2) Composite type with two cathode common elements 3) High reliability 1.25±0.1 2.1±0.1 0~0.1 UMZ6.8N Diodes !Others Item Standard1 IEC1000-4-2 Charge/discharge capacitance : 200pF±10% Charge/discharge capacitance : 150pF Device configuration Discharge resistance : 400Ω ±10% Discharge resistance : 330Ω 5 repetitions No spark or smoke emitted : ±25kV No element destruction No malfunction : ±20kV : ± 8kV 10 repetitions No malfunction Contact Suspended : ± 8kV : ±15kV Judgment contents !Electrical characteristic curves (Ta=25°C) −25°C 25°C75°C 125°C 300 DYNAMIC IMPEADANCE : Zz (Ω) POWER DISSIPATION : Pd (mW) ZENER CURRENT : Iz (A) 10m 1m ...