Document
Transistors
EMX4 / UMX4N / IMX4
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF)
zEquivalent circuits
EMX4 / UMX4N
(3) (2) (1)
IMX4
(4) (5) (6)
(4) (5) (6)
(3) (2) (1)
zDimensions (Unit : mm)
EMX4
ROHM : EMT6 UMX4N
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power EMX4 / UMX4N
dissipation
IMX4
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded.
Symbol VCBO VCEO VEBO IC
Pc
Tj Tstg
Limits 30 20 3 50
150(TOTAL) 300(TOTAL)
150 −55 to +150
Unit V V V mA ∗1
mW ∗2
°C °C
zPackage, marking, and packaging specifications
Type Package Marking
Code Basic ordering unit (pieces)
EMX4 EMT6
X4 T2R 8000
UMX4N UMT6
X4 TR 3000
IMX4 SMT6
X4 T108 3000
ROHM : UMT6 EIAJ : SC-88 IMX4
ROHM : SMT6 EIAJ : SC-74
Each lead has same dimensions Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Collector-base time constant Noise factor
∗Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO
ICBO IEBO hFE VCE(sat) fT Cob rbb' Cc NF
Min. 30 20 3 − − 56 − 600 − − −
Typ. − − − − − − −
1500 0.95
6 4.5
Max. − − − 0.5 0.5
180 0.5 − 1.6 13 −
Unit V V V µA µA − V
MHz pF ps dB
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=2V
VCE/IC=10V/10mA
IC/IB=20mA/4mA
VCE/IE=10V/ −10mA, f=200MHz
∗
VCB/f=10V/1MHz, IE=0A
VCB=10V, IC=10mA , f=31.8MHz
VCE=12V, IC=2mA , f=200MHz , Rg=50Ω
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
Rev.C
1/3
OUTPUT CAPACITANCE :CoB (pF) FEEDBACK CAPACITANCE :Cre (pF)
COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV)
DC CURRENT TRANSFER RATIO :hFE
Transistors
zElectrical characteristic curves
500 Ta=25°C VCE=10V
200
100
50
500
200 100 50
EMX4 / UMX4N / IMX4
Ta=25°C IC/IB=5
5.0
2.0 1.0 0.5
Ta=25°C f=1MHz IE=0A
Cob
Cre
20
10 0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.1 DC current gain vs. collector current
20
10 0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.2 Collector-emitter saturation voltage vs. collector current
0.2
0.1 0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.3 Capacitance vs. reverse bias voltage
COLLECTOR TO BASE TIME CONSTANT : Cc rbb' (ps)
TRANSITION FREQUENCY : fT (MHz)
5000
Ta=25°C
50
VCE=10V
2000 20 1000 10
500 5
200
100 −0.1 −0.2 −0.5 −1 −2
−5 −10 −20
EMITTER CURRENT : IE (mA)
−50
Fig.