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UMX4N Dataheets PDF



Part Number UMX4N
Manufacturers Rohm
Logo Rohm
Description Dual Transistor
Datasheet UMX4N DatasheetUMX4N Datasheet (PDF)

Transistors EMX4 / UMX4N / IMX4 High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) zEquivalent circuits EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) (4) (5) (6) (3) (2) (1) zDimensions (Unit : mm) EMX4 ROHM : EMT6 UMX4N Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector.

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Transistors EMX4 / UMX4N / IMX4 High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) zEquivalent circuits EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) (4) (5) (6) (3) (2) (1) zDimensions (Unit : mm) EMX4 ROHM : EMT6 UMX4N Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power EMX4 / UMX4N dissipation IMX4 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 30 20 3 50 150(TOTAL) 300(TOTAL) 150 −55 to +150 Unit V V V mA ∗1 mW ∗2 °C °C zPackage, marking, and packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMX4 EMT6 X4 T2R 8000 UMX4N UMT6 X4 TR 3000 IMX4 SMT6 X4 T108 3000 ROHM : UMT6 EIAJ : SC-88 IMX4 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions Each lead has same dimensions zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Collector-base time constant Noise factor ∗Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob rbb' Cc NF Min. 30 20 3 − − 56 − 600 − − − Typ. − − − − − − − 1500 0.95 6 4.5 Max. − − − 0.5 0.5 180 0.5 − 1.6 13 − Unit V V V µA µA − V MHz pF ps dB Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=2V VCE/IC=10V/10mA IC/IB=20mA/4mA VCE/IE=10V/ −10mA, f=200MHz ∗ VCB/f=10V/1MHz, IE=0A VCB=10V, IC=10mA , f=31.8MHz VCE=12V, IC=2mA , f=200MHz , Rg=50Ω This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. Rev.C 1/3 OUTPUT CAPACITANCE :CoB (pF) FEEDBACK CAPACITANCE :Cre (pF) COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV) DC CURRENT TRANSFER RATIO :hFE Transistors zElectrical characteristic curves 500 Ta=25°C VCE=10V 200 100 50 500 200 100 50 EMX4 / UMX4N / IMX4 Ta=25°C IC/IB=5 5.0 2.0 1.0 0.5 Ta=25°C f=1MHz IE=0A Cob Cre 20 10 0.1 0.2 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) 50 Fig.1 DC current gain vs. collector current 20 10 0.1 0.2 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) 50 Fig.2 Collector-emitter saturation voltage vs. collector current 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.3 Capacitance vs. reverse bias voltage COLLECTOR TO BASE TIME CONSTANT : Cc rbb' (ps) TRANSITION FREQUENCY : fT (MHz) 5000 Ta=25°C 50 VCE=10V 2000 20 1000 10 500 5 200 100 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE (mA) −50 Fig.


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