Document
EMT1 / UMT1N / IMT1A
General purpose transistor (dual transistors)
Datasheet
Parameter VCEO IC
Tr1 and Tr2 -50V
-150mA
lFeatures
1)Two 2SA1037AK chips in a EMT, UMT or SMT package. 2)Mounting possible with EMT3, UMT3 or SMT3automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half.
lOutline
EMT6
UMT6
SMT6
EMT1 SC-107C
IMT1A SOT-457
lInner circuit
EMT1 / UMT1N
UMT1N SOT-363
IMT1A
lApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
lPackaging specifications
Part No.
Package
EMT1 UMT1N IMT1A
EMT6 UMT6 SMT6
Package size
1616 2021 2928
Taping Reel size Tape width code (mm) (mm)
T2R TN T110
180 180 180
8 8 8
Basic ordering unit.(pcs)
8000
3000
3000
Marking
T1 T1 T1
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1/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
EMT1/ UMT1N IMT1A
Junction temperature
Range of storage temperature
Datasheet
Symbol VCBO VCEO VEBO IC PD*1 *2 PD*1 *3 Tj Tstg
Values -60 -50 -6 -150 150 300 150
-55 to +150
Unit V V V mA mW/Total mW/Total
℃ ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown voltage BVCBO IC = -50μA
Collector-emitter breakdown voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
BVEBO ICBO IEBO VCE(sat) hFE
IE = -50μA VCB = -60V VEB = -6V IC = -50mA, IB = -5mA VCE = -6V, IC = -1mA
Transition frequency
fT
VCE = -12V, IE = 2mA, f = 100MHz
Output capacitance
Cob
VCB = -12V, IE = 0A, f = 1MHz
*1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded.
Values
Min. Typ. Max.
-60 -
-
Unit V
-50 - - V
-6 - - V - - -100 nA - - -100 nA - - -500 mV 120 - 560 -
- 140 - MHz
- 4 5 pF
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2/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
lElectrical characteristic curves (Ta = 25°C)
Fig.1 Ground Emitter Propagation Characteristics
Datasheet
Fig.2 Grounded Emitter Output Characteristics
Fig.3 DC Current Gain vs. Collector Current (I)
Fig.4 DC Current Gain vs. Collector Current (lI)
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3/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
lElectrical characteristic curves (Ta = 25°C)
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(l)
Datasheet
Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current(ll)
Fig.7 Base-Emitter Saturation Voltage vs. Collector Current (I)
Fig.8 Gain Bandwith Product vs. Emitter Current
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4/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
lElectrical characteristic curves (Ta =25°C)
Fig.9 Collector Output Capacitance vs. ollector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage
Datasheet Fig.10 Safe Operating Area
Fig.11 Safe Operating Area
Fig.12 Safe Operating Area
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5/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A lDimensions
Datasheet
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
6/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A lDimensions
Datasheet
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
7/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A lDimensions
Datasheet
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
8/8
20150515 - Rev.003
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