DatasheetsPDF.com

S2516MH

STMicroelectronics

SCR

® S25xxxH SCR FEATURES IT(RMS) = 25A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S25xxxH ...


STMicroelectronics

S2516MH

File Download Download S2516MH Datasheet


Description
® S25xxxH SCR FEATURES IT(RMS) = 25A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/µs. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 85°C Tc= 85°C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 25 16 270 250 310 100 - 40, + 150 - 40, + 125 260 A2s A/µs °C °C Unit A A A I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter B Repetitive peak off-state voltage Tj = 125°C 200 Voltage D 400 M 600 N 800 Unit V 1/5 S25xxxH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 1.6 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 14 VD=12V (DC) RL=33Ω Tj= 25°C MIN MAX VGT VGD tgt IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ Tj= 25°C Tj= 125°C MAX MIN TYP MAX MAX MAX MAX MAX MIN MAX 750 100 115 230 1.6 10 2.5 500 30 75 1.5 0.2 2 100 2...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)