®
S2000AFI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s
STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAG...
®
S2000AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s
s s
STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N).
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
1
3 2
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature
o
Value 1500 700 10 8 15 50 -65 to 150 150
Unit V V V A A W
o o
C C 1/6
December 1999
S2000AFI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T C = 125 C
o
Min.
Typ .
Max. 1 2 100
Un it mA mA µA V
V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ V BE(s at)∗ Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage INDUCTIVE LOAD Storage Time...