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S1T3361D01

Samsung semiconductor

LOW VOLTAGE/POWER NARROW BAND FM IF

LOW VOLTAGE/POWER NARROW BAND FM IF S1T3361D INTRODUCTION The S1T3361D is designed for use in FM dual conversion commu...


Samsung semiconductor

S1T3361D01

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Description
LOW VOLTAGE/POWER NARROW BAND FM IF S1T3361D INTRODUCTION The S1T3361D is designed for use in FM dual conversion communication. It contains a complete narrow band FM demodulation system operable to less than 2.5V supply voltage. This low-power narrow-band FM IF system provides the second converter, second IF, demodulator. Filter Amp and squelch circuitry for communications and scanning receivers. 16−DIP−300A FEATURES Low power consumption (4.0mA typ. at VCC = 4.0V) Excellent input sensitivity (-3dB limiting, 2.0µVrms typ.) Minimum number of external components required. Operating Voltage: 2.5 to 7.0V 16−SOP−225A APPLICATIONS Cordless phone (for home usage) FM dual conversion communications equipment ORDERING INFORMATION Device S1T3361D01-D0B0 S1T3361D01-S0B0 Package 16−DIP−300A 16−SOP−225A Operating Temperature − 20°C to +70°C 1 S1T3361D LOW VOLTAGE/POWER NARROW BAND FM IF PIN CONFIGURATION OSC 1 2 3 4 S1T3361D 5 6 7 8 16 15 14 13 12 11 10 9 RF INPUT GND OSC MIXER OUTPUT VCC LIMITER INPUT DECOUPLING MUTE SCAN CONTROL SQUELCH INPUT FILTER OUTPUT FILTER INPUT AUDIO OUTPUT DECOUPLING QUADRATURE INPUT ABSOLUTE MAXIMUM RATINGS Characteristic Max. Supply Voltage Supply Voltage Range Detector Input Voltage RF Input Voltage (VCC ≥ 4.0V) Mute Function Operating Temperature Storage Temperature Symbol VCC (MAX) VCC VI (DET) VI (RF) VMUTE TOPR TSTG Value 10 2.5 to 7.0 1.0 1.0 − 0.5 to + 0.5 − 20 to + 70 − 65 to + 150 Unit V V VP-P Vrms Vpeak °C °C NOTE:...




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