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S1T2418G01

Samsung semiconductor

TONE RINGER

TONE RINGER WITH DRIDGE DIODE S1T2418G01/D02 INTRODUCTION The S1T2418G01/D02 is a monolithic integrated circuit teleph...


Samsung semiconductor

S1T2418G01

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Description
TONE RINGER WITH DRIDGE DIODE S1T2418G01/D02 INTRODUCTION The S1T2418G01/D02 is a monolithic integrated circuit telephone tone ringer with bridge diode. When coupled with an appropriate transducer, it replaces the electro-mechanical bell. This device is designed for use with either a piezo transducer or an inexpensive transformer-coupled speaker to produce a pleasing tone composed of high frequencies (fH1, fH2) alternating with a low frequency (fS) resulting in a warble frequency. The supply voltage is obtained from the AC ring signal and the circuit is designed so that noise on the line or variation of the ringing signal cannot affect correct operation of the device. 8−DIP−300 FEATURES Built-in full wave bridge diode rectifier Low current consumption, in order to allow the parallel operation of 4 devices Few external components Tone and adjustable switching frequencies by external components High noise immunity to current hysteresis due to built-in voltage Adjustable activation voltage Internal zener diodes to protect against over-voltages Adjustable ringer impedance with external components APPLICATIONS Electronic telephone ringers Extension ringers ORDERING INFORMATION Device S1T2418G01-D0B0 S1T2418D02-D0B0 Package 8−DIP−300 Operating Temperature −20°C to +70°C 1 S1T2418G01/D02 TONE RINGER WITH BRIDGE DIODE BLOCK DIAGRAM RECTIFIER CAPACITOR 7 ACTIVATION VOLTAGE ADJUSTABLE 6 TIP 8 - + POWER SUPPLY CONTROL CIRCUIT LOW FREQ OSC HIGH FREQ...




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