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S15SC4M Dataheets PDF



Part Number S15SC4M
Manufacturers Shindengen Electric Mfg.Co.Ltd
Logo Shindengen Electric Mfg.Co.Ltd
Description Schottky Barrier Diode
Datasheet S15SC4M DatasheetS15SC4M Datasheet (PDF)

SHINDENGEN Schottky Barrier Diode Twin Diode S15SC4M 40V 15A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● Small θ jc ●High current capacity OUTLINE DIMENSIONS Case : MTO-3P Unit : mm APPLICATION ● Switching power supply ●DC/DC converter ●Home Appliances, Office Equipment ●Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1.

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SHINDENGEN Schottky Barrier Diode Twin Diode S15SC4M 40V 15A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● Small θ jc ●High current capacity OUTLINE DIMENSIONS Case : MTO-3P Unit : mm APPLICATION ● Switching power supply ●DC/DC converter ●Home Appliances, Office Equipment ●Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=135℃ IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Rating of per diode, Tj=125℃ Peak Surge Forward Current PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃ Repetitive Peak Surge Reverse Power TOR (Recommended torque:0.5N・m) Mounting Torque ●Electrical Characteristics (If not specified Item Symbol VF Forward Voltage IR Reverse Current Cj Junction Capacitance θjc Thermal Resistance Tc=25℃) Conditions IF=7.5A, VR=VRM, f=1MHz, Pulse measurement, Rating of per diode Pulse measurement, Rating of per diode VR=10V Rating of per diode Ratings -40~150 150 40 45 15 170 330 0.8 Unit ℃ ℃ V V A A W N ・m junction to case Ratings Max.0.55 Max.5 Typ.340 Max.1.2 Unit V mA pF ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S15SC4M Forward Voltage 10 Forward Current IF [A] Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S15SC4M Junction Capacitance f=1MHz Tc=25°C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] S15SC4M 1000 Reverse Current Tc=150 °C [MAX] 100 Tc=150 °C [TYP] Reverse Current IR [mA] Tc=125 °C [TYP] 10 Tc=100 °C [TYP] 1 Tc=75 °C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] S15SC4M 25 Reverse Power Dissipation DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] 20 15 0.5 10 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150 °C 0 VR tp D=tp /T T S15SC4M 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] DC D=0.8 0.5 12 SIN 10 8 6 4 2 0 0.05 0.1 0.2 0.3 0 5 10 15 20 25 Average Rectified Forward Current IO [A] Tj = 150 °C IO 0 tp D=tp /T T S15SC4M 30 Derating Curve Average Rectified Forward Current IO [A] 25 DC D=0.8 20 0.5 15 SIN 0.3 0.2 0.1 5 0.05 10 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V IO 0 0 VR tp D=tp /T T S15SC4M 250 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 200 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125°C before surge current is applied 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM (t p) / PRRSM (t p=10µs) Ratio 1 0.1 1 10 100 Pulse Width t p [ µs] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP .


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