Document
SHINDENGEN
Schottky Barrier Diode
Twin Diode
S15SC4M
40V 15A
FEATURES
● Tj150℃ ● PRRSM avalanche guaranteed ● Small θ jc ●High current capacity
OUTLINE DIMENSIONS
Case : MTO-3P Unit : mm
APPLICATION
● Switching power supply ●DC/DC converter ●Home Appliances, Office Equipment ●Telecommunication
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=135℃ IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Rating of per diode, Tj=125℃ Peak Surge Forward Current PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃ Repetitive Peak Surge Reverse Power TOR (Recommended torque:0.5N・m) Mounting Torque ●Electrical Characteristics (If not specified Item Symbol VF Forward Voltage IR Reverse Current Cj Junction Capacitance θjc Thermal Resistance Tc=25℃) Conditions
IF=7.5A, VR=VRM, f=1MHz, Pulse measurement, Rating of per diode Pulse measurement, Rating of per diode VR=10V Rating of per diode
Ratings -40~150 150 40 45 15 170 330 0.8
Unit ℃ ℃ V V A A W N ・m
junction to case
Ratings Max.0.55 Max.5 Typ.340 Max.1.2
Unit V mA pF ℃/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S15SC4M
Forward Voltage
10
Forward Current IF [A]
Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
S15SC4M
Junction Capacitance
f=1MHz Tc=25°C TYP per diode
1000
Junction Capacitance Cj [pF]
100
0.1
1
10
Reverse Voltage VR [V]
S15SC4M
1000
Reverse Current
Tc=150 °C [MAX]
100
Tc=150 °C [TYP]
Reverse Current IR [mA]
Tc=125 °C [TYP] 10 Tc=100 °C [TYP]
1
Tc=75 °C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
S15SC4M
25
Reverse Power Dissipation
DC D=0.05 0.1 0.2 0.3
Reverse Power Dissipation PR [W]
20
15
0.5 10
5
SIN 0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150 °C
0 VR tp D=tp /T T
S15SC4M
16 14
Forward Power Dissipation
Forward Power Dissipation PF [W]
DC D=0.8 0.5
12 SIN 10 8 6 4 2 0 0.05 0.1 0.2 0.3
0
5
10
15
20
25
Average Rectified Forward Current IO [A]
Tj = 150 °C IO 0 tp D=tp /T T
S15SC4M
30
Derating Curve
Average Rectified Forward Current IO [A]
25
DC D=0.8
20 0.5 15 SIN 0.3 0.2 0.1 5 0.05
10
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 20V IO 0 0 VR tp D=tp /T T
S15SC4M
250
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
200
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=125°C before surge current is applied
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM (t p) / PRRSM (t p=10µs) Ratio
1
0.1
1
10
100
Pulse Width t p [ µs]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
.