DatasheetsPDF.com

S10C70 Dataheets PDF



Part Number S10C70
Manufacturers Mospec Semiconductor
Logo Mospec Semiconductor
Description SCHOTTKY BARRIER RECTIFIERS
Datasheet S10C70 DatasheetS10C70 Datasheet (PDF)

MOSPEC S10C70 Thru S10C100 Schottky Barrier Rectifiers --- Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss.

  S10C70   S10C70



Document
MOSPEC S10C70 Thru S10C100 Schottky Barrier Rectifiers --- Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 4KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 70-100 VOLTS TO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR), TC=125 Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase,60Hz ) Operating and Storage Junction Temperature Range Symbol 70 VRRM VRWM 70 VR VR(RMS) 49 IO IFSM S10C 80 90 Unit 100 80 90 100 V 56 63 70 V 5 10 A 125 A TJ , TSTG -65 to +150 ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF =5.0 Amp) Maximum Instantaneous Reverse Current (Rated DC Voltage, TC = 25 ) (Rated DC Voltage, TC = 125 ) Maximum Thermal Resistance Junction to Case Typical Junction Capacitance (Reverse Voltage of 4 volts & f=1 MHz) Symbol VF IR RθJc CP S10C 70 80 90 100 0.75 0.85 0.5 20 4.2 300 275 Unit V mA oC/W PF DIM MILLIMETERS MIN MAX A 14.68 15.32 B 9.78 10.42 C 5.02 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 2.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.98 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 S10C70 thru S10C100 FIG-1 FORWARD CURRENT DERATING CURVE FIG-2 TYPICAL FORWARD CHARACTERISITICS S10C70,S10C80 S10C90,S10C100 NSTANTANEOUS FORWARD CURRENT (Amp.) AVERAGE FORWARD RECTIFIED CURRENT (Amp.) INSTANTANEOUS REVERSE CURRENT (mA.) CASE TEMPERATURE ( ) FIG-3 TYPICAL REVERSE CHARACTERISTICS Tj=125oc Tj=75oc Tj=25oc PERCENT OF RATED REVERSE VOLTAGE ( ) FIG-5 PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE (PF) FORWARD VOLTAGE (Volts) FIG-4 TYPICAL JUNCTION CAPACITANCE S10C70,-S10C80 S10C90,S10C100 REVERSE VOLTAGE (Volts) PEAK FORWARD SURGE CURRENT (Amp.) NUMBER OF CYCLES AT 60 Hz Notice MOSPEC reserves the rights to make changes of the content herein the document anytime without notification. MOSPEC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Please refer to MOSPEC website for the last document. MOSPEC disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially incurred. Application shown o.


S10C60 S10C70 S10C80


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)