S10A015

SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P OUT = 1.5 W MIN. WITH 9.5 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD5000 BRANDING S10A015 PIN CONNECTION DESCRIPTION The SD5000 is a NPN Silicon Transistor designed for high gain linear performance at 1000 MHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD5000 can be used for applications such as Telecommunications, Radar, ECM, Space and other commercial and military systems. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 50 50 3.5 1.0 7.0 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 25 °C/W 1/4 November 1992 SD5000 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCES BVCEO ICBO hFE DYNAMIC Symbol IC = 10mA IE = 5mA IC = 10mA IC = 5mA VCB = 28V VCE = 5V IC = 100mA 50 3.5 50 23 — 18 — — — — 0.2 — — — — — — 200 V V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT 1dB f = 1 GHz GP VSWR ...