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BUJ302AX

NXP

Silicon Diffused Power Transistor

TO-220F BUJ302AX NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General desc...


NXP

BUJ302AX

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Description
TO-220F BUJ302AX NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A (TO-220F) plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Isolated package „ Low thermal resistance 1.3 Applications „ DC-to-DC converters „ High-frequency electronic lighting ballast applications „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current see Figure 1; see Figure 2; see Figure 4 Ptot total power dissipation Th ≤ 25 °C; see Figure 3 VCESM collector-emitter peak voltage VBE = 0 V Static characteristics hFE DC current gain IC = 0.1 A; VCE = 5 V; Th = 25 °C; see Figure 11 IC = 0.8 A; VCE = 3 V; Th = 25 °C; see Figure 12 Min Typ Max Unit - - 4A - - 26 W - - 1050 V 48 66 100 25 42 50 NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description B base C collector E emitter n.c. isolated Simplified outline mb BUJ302AX NPN power transistor Graphic symbol C B E sym123 3. Ordering information 123 SOT186A (TO-220F) Table 3. Ordering information Type number Package Name BUJ302AX TO-220F 4. Limiting values Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" Version SOT186A Table 4. Limiting values In acco...




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