Document
TO-220AB
BUJ103A
Silicon diffused power transistor
Rev. 4 — 8 November 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
Low thermal resistance
Fast switching
1.3 Applications
Electronic lighting ballasts Inverters
DC-to-DC converters Motor control systems
1.4 Quick reference data
VCESM 700 V Ptot 80 W
IC 4 A hFEsat = 12.5 (typ)
2. Pinning information
Table 1. Pin 1 2 3 mb
Pinning Description base collector emitter mounting base; connected to collector
Simplified outline
mb
Symbol
2 1
3
sym056
123
SOT78 (TO-220AB)
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
BUJ103A
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads SOT78
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj
peak collector-emitter voltage collector-base voltage collector-emitter voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation storage temperature junction temperature
VBE = 0 V open emitter open base
Tmb 25 C; see Figure 1
Min Max Unit - 700 V - 700 V - 400 V - 4A - 8A - 2A - 4A - 80 W 65 +150 C - 150 C
120
Pder (%)
80
001aab993
40
0 0 40 80 120 160 Tmb (°C)
Pder%
=
--------P----t--o---t------- 100% Ptot25 C
Fig 1. Normalized total power dissipation as a function of mounting base temperature
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
2 of 13
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
5. Thermal characteristics
Table 4. Symbol Rth(j-mb) Rth(j-a)
Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient
Conditions see Figure 2 in free air
Min Typ Max Unit - - 1.56 K/W - 60 - K/W
001aab998
10
Zth(j-mb) (K/W)
1 δ = 0.5
10−1
0.2 0.1 0.05 0.02
0.01
Ptot
tp δ=
T
10−2 10−5
10−4
10−3
10−2
10−1
tp T
t
1 10 tp (s)
Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
6. Characteristics
Table 5. Characteristics Tmb = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
ICES
ICBO ICEO
collector-emitter cut-off current
collector-base cut-off current collector-emitter cut-off current
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VBE = 0 V; VCE = VCESMmax VCEO = VCEOMmax = 400 V
IEBO VCEOsus
emitter-base cut-off current
collector-emitter sustaining voltage
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA; L = 25 mH; see Figure 3 and 4
VCEsat
collector-emitter saturation voltage
IC = 3.0 A; IB = 0.6 A; see Figure 10
VBEsat
base-emitter saturation voltage
IC = 3.0 A; IB = 0.6 A; see Figure 11
hFE DC current gain
hFEsat
DC saturation current gain
Dynamic characteristics
IC = 1 mA; VCE = 5 V; see Figure 9 IC = 500 mA; VCE = 5 V IC = 2.0 A; VCE = 5 V IC = 3.0 A; VCE = 5 V
Switching times (resistive load); see Figure 5 and 6
ton turn-on time tstg storage time
ICon = 2.5 A; IBon = IBoff = 0.5 A; RL = 75
tf fall time
Switching times (inductive load); see Figure 7 and 8
tstg storage time tf fall time
ICon = 2 A; IBon = 0.4 A; LB = 1 H; VBB = 5 V
Switching times (inductive load); see Figure 7 and 8
tstg storage time tf fall time
ICon = 2 A; IBon = 0.4 A; LB = 1 H; VBB = 5 V; Tj = 100 C
[1] Measured with half sine-wave voltage (curve tracer).
Min Typ Max Unit
[1] - - 1 mA [1] - - 2 mA [1] - - 1 mA [1] - - 0.1 mA
-400 -
0.1 mA -V
-
0.25 1
V
- 0.97 1.5 V
10 17 32 13 22 32 11 16 22 - 12.5 -
- 0.52 0.6 s - 2.7 3.3 s - 0.3 0.35 s
- 1.2 1.4 s - 30 60 ns
- - 1.8 s - - 120 ns
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
6V
30 Hz to 60 Hz
300 Ω
50 V 100 Ω to 200 Ω
horizontal oscilloscope vertical
1Ω 001aab987
Fig 3. Test circuit for collector-emitter sustaining voltage
VIM 0
tp T
VCC RL
RB DUT
001aab989
Fig 5.
VIM = 6 V to +8 V; VCC = 250 V; tp = 20 s; = tp/T = 0.01. RB and RL calculated from ICon and IBon requirements.
Test circuit for resistive load switching
IC (mA)
250
100
10 0 min VCE (V) VCEO.