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BUJ103A Dataheets PDF



Part Number BUJ103A
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BUJ103A DatasheetBUJ103A Datasheet (PDF)

TO-220AB BUJ103A Silicon diffused power transistor Rev. 4 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballasts  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  4 A.

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TO-220AB BUJ103A Silicon diffused power transistor Rev. 4 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballasts  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  4 A  hFEsat = 12.5 (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector Simplified outline mb Symbol 2 1 3 sym056 123 SOT78 (TO-220AB) NXP Semiconductors BUJ103A Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJ103A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads SOT78 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj peak collector-emitter voltage collector-base voltage collector-emitter voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation storage temperature junction temperature VBE = 0 V open emitter open base Tmb  25 C; see Figure 1 Min Max Unit - 700 V - 700 V - 400 V - 4A - 8A - 2A - 4A - 80 W 65 +150 C - 150 C 120 Pder (%) 80 001aab993 40 0 0 40 80 120 160 Tmb (°C) Pder% = --------P----t--o---t-------  100% Ptot25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature BUJ103A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 2 of 13 NXP Semiconductors BUJ103A Silicon diffused power transistor 5. Thermal characteristics Table 4. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 2 in free air Min Typ Max Unit - - 1.56 K/W - 60 - K/W 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 10−1 0.2 0.1 0.05 0.02 0.01 Ptot tp δ= T 10−2 10−5 10−4 10−3 10−2 10−1 tp T t 1 10 tp (s) Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration BUJ103A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 13 NXP Semiconductors BUJ103A Silicon diffused power transistor 6. Characteristics Table 5. Characteristics Tmb = 25 C; unless otherwise specified. Symbol Parameter Conditions Static characteristics ICES ICBO ICEO collector-emitter cut-off current collector-base cut-off current collector-emitter cut-off current VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VBE = 0 V; VCE = VCESMmax VCEO = VCEOMmax = 400 V IEBO VCEOsus emitter-base cut-off current collector-emitter sustaining voltage VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH; see Figure 3 and 4 VCEsat collector-emitter saturation voltage IC = 3.0 A; IB = 0.6 A; see Figure 10 VBEsat base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A; see Figure 11 hFE DC current gain hFEsat DC saturation current gain Dynamic characteristics IC = 1 mA; VCE = 5 V; see Figure 9 IC = 500 mA; VCE = 5 V IC = 2.0 A; VCE = 5 V IC = 3.0 A; VCE = 5 V Switching times (resistive load); see Figure 5 and 6 ton turn-on time tstg storage time ICon = 2.5 A; IBon = IBoff = 0.5 A; RL = 75  tf fall time Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time ICon = 2 A; IBon = 0.4 A; LB = 1 H; VBB = 5 V Switching times (inductive load); see Figure 7 and 8 tstg storage time tf fall time ICon = 2 A; IBon = 0.4 A; LB = 1 H; VBB = 5 V; Tj = 100 C [1] Measured with half sine-wave voltage (curve tracer). Min Typ Max Unit [1] - - 1 mA [1] - - 2 mA [1] - - 1 mA [1] - - 0.1 mA -400 - 0.1 mA -V - 0.25 1 V - 0.97 1.5 V 10 17 32 13 22 32 11 16 22 - 12.5 - - 0.52 0.6 s - 2.7 3.3 s - 0.3 0.35 s - 1.2 1.4 s - 30 60 ns - - 1.8 s - - 120 ns BUJ103A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 8 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 13 NXP Semiconductors BUJ103A Silicon diffused power transistor 6V 30 Hz to 60 Hz 300 Ω 50 V 100 Ω to 200 Ω horizontal oscilloscope vertical 1Ω 001aab987 Fig 3. Test circuit for collector-emitter sustaining voltage VIM 0 tp T VCC RL RB DUT 001aab989 Fig 5. VIM = 6 V to +8 V; VCC = 250 V; tp = 20 s;  = tp/T = 0.01. RB and RL calculated from ICon and IBon requirements. Test circuit for resistive load switching IC (mA) 250 100 10 0 min VCE (V) VCEO.


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