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BUH515D Dataheets PDF



Part Number BUH515D
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet BUH515D DatasheetBUH515D Datasheet (PDF)

® BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 2 1 APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is .

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® BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 2 1 APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM R Typ. = 12 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 5 8 15 5 8 50 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 November 1999 BUH515D THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1300 V V CE = 1500 V V CE = 1500 V V EB = 5 V IC = 5 A IC = 5 A IC = 5 A IC = 5 A I B = 1.25 A I B = 1.25 A V CE = 5 V V CE = 5 V 5 3 2.4 170 3.5 450 Min. Typ . Max. 10 0.2 2 200 1.5 1.3 10 Un it µA mA mA mA V V T j = 125 oC I EBO V CE(sat )∗ V BE(s at)∗ h F E∗ T j = 100 oC ts tf ts tf V CC = 400 V I B1 = 1.5 A IC = 5 A I B1 = 1.25 A IC = 5 A I B2 = -2.5 A 3.6 260 µs ns µs ns f = 15625 Hz IB2 = -2.5 A π  V c eflybac k = 1050 sin  106 t  10  V VF Diode F orward Voltage I F = 5 A 2 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/7 BUH515D Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz (see figure 2) 3/7 BUH515D Switching Time Resistive Load BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at 16 KHz frequencies for choosing the optimum negative drive. The test circuit is illustrated in fig. 1. Inductance L 1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 ω = 2 πf = L C  √ Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. 4/7 BUH515D Figure 1: Inductive Load Switching Test Circuit Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUH515D ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP. MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.354 4.6 3.5 3.7 0.138 0.181 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended : 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 6/7 P025C/A BUH515D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not auth.


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