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BUH315D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH VOLT...
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BUH315D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))
NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.
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APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature
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Value 1500 700 10 6 12 3 5 44 -65 to 150 150
Uni t V V V A A A A W
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C C 1/7
December 1999
BUH315D
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.8
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall ...